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921102s1991 -usa |||||||||||||eng d |
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|z 1318
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|a HR-ZaIRB
|b hrv
|c HR-ZaIRB
|e ppiak
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| 080 |
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|a 538.9
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| 111 |
2 |
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|4 aut
|a Defects in Silicon II.
|c Washington)
|d (May 5-10, 1991 ;
|e Proc. of the Second Symposium on...
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| 245 |
1 |
0 |
|a Defects in silicon II /
|c Edited by W. Murray Bullis, Ulrich Goesele, Fumio Shimura.
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| 260 |
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|a Pennington, NJ :
|b The Electrochemical Society,
|c [1991].
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| 300 |
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|a XI, 692 str. :
|b ilustr. ;
|c 23 cm.
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| 504 |
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|a kazalo.
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| 653 |
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|a condensed matter
|a defects and devices
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| 700 |
1 |
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|4 edt
|a Bullis, W. Murray
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| 942 |
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|c BOOK
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| 960 |
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|a Pivac, Branko
|c Tamaris 339/92
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| 999 |
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|c 980
|d 980
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